
ABSTRACT
We conducted the analysis and practice of the
module circuits and electronic devices (MCM4),
identifying the recognition of an NPN and PNP
transistor (its operation is based on the ability to
transfer electrical charges or holes from a first
zone to the second), The ohmmeters issuer
identified, base, collector and different
configurations and different models developed in
the Multisim program, we verify that the effect of
resistive Tremo semiconductor characteristics
very different from those observed in metals
called, was made in the respective observation
oscilloscope feature output and input voltages.
We conducted the analysis and practice of the
module circuits and electronic devices (MCM4),
identifying the recognition of an NPN and PNP
transistor (its operation is based on the ability to
transfer electrical charges or holes from a first
zone to the second), The ohmmeters issuer
identified, base, collector and different
configurations and different models developed in
the Multisim program, we verify that the effect of
resistive Tremo semiconductor characteristics
very different from those observed in metals
called, was made in the respective observation
oscilloscope feature output and input voltages.
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